SiC specialist NoMIS Power Corporation has announced its participation in a three-year, $2.5 million DC-GRIDS project led by ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten new models of its industrial-use NX-type 1.2kV insulated gate bipolar transistor (IGBT) module ...

Beyond this consortium, NoMIS Power's 3.3 kV SiC MOSFETs and power modules are available as supply to other DC-GRIDS teams, as well as to broader medium- and high-voltage power electronics developers.

As AI systems push HBM into terabit-per-second territory, memory test strategy is becoming a core part of system design.

Kiwa PVEL has rolled out updates to its module testing programme, with two changes affecting Static Mechanical Load (SML) and ...

Autonomous and robotic systems rely on highbandwidth, lowlatency sensor data to perceive and navigate the world.

Since the beginning of 2026, the global power semiconductor industry has witnessed a wave of extensive and intensive price ...

Abstract: The die-attach layer is a vulnerable structure that is important to the reliability of an insulated-gate bipolar transistor (IGBT) module. A new failure mechanism named fatigue crack network ...

Scale-iFlex XLT plug-and-play dual-channel gate drivers from Power Integrations operate IGBT modules with blocking voltages of up to 2.3 kV. These ready-to-use drivers work with LV100 (Mitsubishi), ...