SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced its new plug-and-play ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

Microchip Technology Inc. has announced a portfolio of IGBT 7 devices housed in different packages, offering multiple topologies and current and voltage ranges. Featuring increased power capability, ...

As the relatively mature wire-bonding technology continues to advance, it has become fully suitable for processing automotive silicon-based IGBT modules, and SiC (silicon carbide) power modules and is ...

Low-noise characteristics make Rohm’s BM6437x 600-V IGBT intelligent power modules (IPMs) well-suited for power conversion in inverters. The four-model lineup achieves class-leading performance by ...

The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...

The need to mitigate climate change is driving a need to electrify our infrastructure, vehicles, and appliances, which can then be charged and powered by renewable energy sources. The most visible and ...

Reduces industrial-inverter power loss by up to approx. 19% for more power-efficient equipment Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of ten ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a free service on June 28 to provide design ...

(Image courtesy of Elsevier Publishing). Who else would you want to author a book about the IGBT (insulated gate bipolar transistor) than its inventor, Dr. B. Jayant Baliga? This invention is widely ...