IEEE

Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes

Abstract: This paper presents the design, fabrication, and comparison of different planar edge termination techniques on high-voltage 4H-SiC PiN diodes, including single- and double-junction ...
C&EN

Systematic Investigation of Surface Modification by Organosiloxane Self-Assembled on Indium–Tin Oxide for Improved Hole Injection in Organic Light-Emitting Diodes

Key Lab of Organic Optoelectronics and Molecular Engineering of Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China Article Views are the COUNTER-compliant sum ...
IEEE

10-kV 4H-SiC Drift Step Recovery Diodes (DSRDs) for Compact High-repetition Rate Nanosecond HV Pulse Generator

Abstract: In this paper, the 10-kV 4H-SiC Drift Step Recovery Diodes (DSRDs) are designed, fabricated and characterized for high voltage (HV) pulse generator. Owing to the superior SiC material ...
C&EN

Effect of Conjugation Pathway in Metal-Free Room-Temperature Dual Singlet–Triplet Emitters for Organic Light-Emitting Diodes

Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...