Abstract: For decades, the fundamental driving force behind energy-efficient and cost-effective electronic components has been the downward scaling of electronic devices. However, due to approaching ...
Abstract: In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of $\mathbf{4 F}^{2}$ ...
Abstract: The demonstration of organic bipolar transistor in 2022 completed the missing puzzle in the organic transistor development roadmap. The major obstacle was that the typical amorphous organic ...
Abstract: Electron-beam evaporation is commonly used to form metal contacts on two-dimensional (2D) materials. Many evaporated metals contain high levels of stress, but the effect of this stress on 2D ...
Abstract: An ON-chip vacuum transistor based on electron emission from SiOx tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel ...
Abstract: Fine grain reconfigurability carried out at the transistor level, i.e. the ability to switch between n- and p-type operation, offers new possibilities for highly efficient logic gates. In ...
Abstract: Transistors have gained tremendous attraction in biochemical sensing due to their outstanding performance with high sensitivity, flexibility, selectivity, real-time monitoring, ease of ...
Abstract: Ultrathin films of In2O3 have demonstrated high transistor mobility yet exhibit vulnerability to stability degradation under bias stress. Here, we engineered ultrathin In2O3 films via atomic ...
Abstract: Power electronics systems such as matrix converters require devices that are capable of blocking high voltage and conducting current in both forward and reverse directions. In this work, we ...
When Sam Darnold threw his second interception Thursday night, there was no reason to believe the Seattle Seahawks could come back. The Los Angeles Rams had clearly been the better team. Darnold was ...
Abstract: Herein, thin-film transistors (TFT) with ITO as the n-channel active layer were prepared on transparent substrates by magnetron sputtering at room temperature. The use of chitosan with an ...
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