When classic 2D scaling dominated, the industry’s center of gravity was disinflationary: Chip average selling prices (ASPs) trended lower, and wafer fab equipment (WFE) growth was intermittent. In ...
Abstract: As gate-all-around nanosheet transistors (GAA NSFETs) replacing current FinFETs for their superior gate control capabilities, it needs various performance optimizations for better transistor ...
Abstract: In this paper, Sentaurus TCAD simulation was utilized to study the electrical characteristics of floating body and body contact SOI devices. The short channel effect, subthreshold slope, ...
Abstract: The recombination mechanism in Organic light-emitting transistors (OLETs) has been a topic of interest as it plays a key role in defining the efficiency of organic tunable LASERs. Efforts ...
Abstract: P-GaN gate GaN HEMTs can be categorized into Schottky-type and ohmic-type regarding the gate contact, resulting in different behaviors of the transistors. This paper presents a comparative ...
Abstract: Recently, three-dimensional (3D) point-cloud analysis has been extensively utilized in the domain of machine vision, encompassing tasks include shape classification and segmentation. However ...
Abstract: Transistor characteristics in advanced technology nodes are strongly impacted by devices design and process integration choices. Variation in the layout and pattern configuration in close ...
Abstract: Although point cloud segmentation has a principal role in 3D understanding, annotating fully large-scale scenes for this task can be costly and time-consuming. To resolve this issue, we ...
Abstract: Microcavity plasma devices possess numerous advantages such as high temperature resistance, radiation tolerance, and strong electromagnetic interference resistance, therefore exhibiting a ...
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