Abstract: The evolution states of Si-SiO2 interface traps have been attracting much attention, but there are few reports on the recombination enhanced defect reaction (REDR) effect at interface traps.

Abstract: The Reaction-Diffusion-Drift (RDD) framework, implemented in both Sentaurus TCAD and standalone 1-D versions, is used to simulate Program/Erase (P/E) cycling related Tunnel Oxide Trap ...

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