V SiC power modules includes a 608-A half-bridge module with 2.4-mΩ on-resistance and best-in-class thermal resistance.
Navitas Semiconductor is pivoting toward AI data centers with GaN and SiC power tech, betting long-term growth on next-gen ...
The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...
Motorola announced three new smartphone models—edge 70, g57, and g86 Power—in Taiwan on January 12, highlighting a ...
Abstract: To address the critical challenges of thermal management, thermo-mechanical stress concentration, and electric field distortion in high-voltage SiC power modules, this study proposes a ...
Renesas Electronics is positioned to benefit from content growth in autos (ADAS and car control) and data center (power and ...
Empower RF Systems has announced the release of its latest C-UAS RF amplifier module, Model 1211, engineered for robust ...
Binocular Full-Color AR Glasses Reference Design "Rubis" Debuts with Tri-Chip Architecture and EMG Interaction The path to mainstream adoption of consumer AI-powered AR glasses has been hindered by ...
Locally, Australia’s process automation sector—key for mining and heavy industry—stands at AU$686 million in 2025, heading to ...
Honor Power 2 will arrive as a successor to the Honor Power The new phone will support 80W wired fast charging Honor Power 2 is said to feature 6.79-inch screen ...
Abstract: This paper introduces a novel staggered terminal layout for SiC MOSFET multi-chip power modules. The proposed layout reduces parasitic inductance by canceling inductance within the power ...
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