You don’t see them much anymore, but there was a time when any hobbyist who dealt with RF probably had a grid dip meter. The ...
Abstract: In this work, an analytical model for fringe gate capacitance in complementary FET (CFET) is proposed. Three kinds of CFET based on the fin, gate-all-around (GAA) nanowire, and nanosheet are ...
Abstract: In the era of artificial intelligence and big data, the demand for high-speed and reliable memory technologies is growing rapidly. For semiconductor memories such as DRAM and FeRAM, ...
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