Abstract: Silicon carbide (SiC) power MOSFETs with trench-gate structure have been irradiated with heavy-ion broad beam and microbeam. Microdose effects resulting in higher subthreshold drain leakage ...
Centre for Materials Science, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710, South Africa Institute for Nanotechnology and Water Sustainability (iNanoWS ...
Abstract: The mechanism of mobility improvement by the oxidation-minimizing process was investigated by measuring the low-temperature characteristics of MOSFETs with two different gate oxides formed ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback