Abstract: The silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) under real-world operating conditions contends with multistress scenarios, involving thermal, ...
Abstract: Silicon carbide (SiC) power MOSFETs with trench-gate structure have been irradiated with heavy-ion broad beam and microbeam. Microdose effects resulting in higher subthreshold drain leakage ...
Centre for Materials Science, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710, South Africa Institute for Nanotechnology and Water Sustainability (iNanoWS ...
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