Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: This paper presents the experiment and analysis on the control of current in Metal Insulation (MI) magnet using a DC power supply and power semiconductor components. A 3 V DC voltage is ...
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