Abstract: Gate-oxide degradation caused by bias temperature instability (BTI) is one of the most critical reliability issues for silicon carbide (SiC) metal–oxide–semiconductor field-effect ...
Abstract: A biasing method for a stacked field-effect transistor (FET)-based radio-frequency (RF) switch is proposed. The advantage of the method over conventional passive resistive biasing is the ...
このプリント基板は、ぺるけさんの FET & CRD選別冶具 (改訂版) のページで紹介されている J-FET テスターの回路を実装したものです。 この基板は J-FET のドレイン飽和電流 (Idss) およびバイアス ...
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