Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: In this paper, the influence of the transverse magnetic field (TMF) on the post-arc residual plasma dissipation process of vacuum circuit breaker (VCB) is investigated by simulation. A ...
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