Abstract: This work introduces a novel accelerated lifetime testing (ALT) methodology for Lateral GaN-on-Si high electron mobility transistors (HEMTs) called “Three Factor Acceleration Testing.” By ...
This repository provides the pytorch code for the paper "LAP-GAN: Label augmentation with perceptual loss for self-supervised text-to-image synthesis" by Yong Xuan Tan, Jit Yan Lim, Kian Ming Lim, ...
Abstract: GaN bidirectional switches unlock the design of single-stage ac-dc topologies with smaller part count and higher efficiency than incumbent dual-stage topologies. Because of GaN lateral ...
A comprehensive implementation of state-of-the-art generative models for creating synthetic financial time series data that preserves real-world statistical properties, temporal dynamics, and market ...
onsemi has announced it has signed a collaboration agreement with GlobalFoundries (GF) to develop and manufacture advanced gallium nitride (GaN) power products using GF’s 200mm eMode GaN-on-silicon ...
Onsemi has signed a collaboration agreement with GlobalFoundries to develop and manufacture next-generation gallium nitride (GaN) power devices, expanding its power semiconductor portfolio to include ...
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