Abstract: At submicron range below 45 nm technology for MOS transistors, leakage power dissipation is a critical concern other than dynamic and short circuit power dissipation. This happens due to the ...
Abstract: A simple equation RF MOS FET model using hyperbolic tangent functions and its parameter extraction technique have been demonstrated. Only twenty parameters are required without physical ...
A line drawing of the Internet Archive headquarters building façade. An illustration of a magnifying glass. An illustration of a magnifying glass.
Ask the publishers to restore access to 500,000+ books. A line drawing of the Internet Archive headquarters building façade. An illustration of a heart shape "Donate to the archive" An illustration of ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback