Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...
Abstract: The double pulse test (DPT) configuration plays a critical role in the dynamic characterization of SiC MOSFETs due to their high dv/dt and di/dt rates. This paper investigates the impact of ...
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