Abstract: This paper investigated a novel silicon carbide (SiC) trench MOSFET with integrated N+-PolySi/SiC HeteroJunction diode (nHJ-TMOS) on the trench sidewalls to realize low power loss and high ...
Gate App launches version 8.0, with a fresh visual design, improved navigation, and optimized performance for traders worldwide. Gate App introduces version 8.0 with refined design and smoother ...
Abstract: This paper analyses the performance of a double-gate tunnel field-effect transistor (DGTFET) using two-dimensional device simulations. DGTFET is compared with double-gate MOSFET and it is ...
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