Effect of Indium Doping on Bias Stability in Dual-Target Co-Sputtering InZnSnO Thin-Film Transistors
Abstract: Despite increasing indium content improves the field-effect mobility of metal–oxide thin-film transistors (TFTs), it is usually accompanied by the deterioration in bias stability. In this ...
Abstract: A biasing method for a stacked field-effect transistor (FET)-based radio-frequency (RF) switch is proposed. The advantage of the method over conventional passive resistive biasing is the ...
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