Abstract: A CMOS image sensor (CIS) is simulated thanks to a TCAD environment for the direct detection of electrons in a transmission electron microscope (TEM). Two main parameters are studied, the ...
Abstract: In this paper, the transfer characteristic of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistor (TFT) under the mechanical bending stress is analyzed using technology of ...
This Project consists programs related to the simulations of HEMT(High Electron Mobility Transistor).These codes are written for SILVACO TCAD simulation tool. It mainly concerned about improvement of ...
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