Abstract: In this paper we present simulation based radiation damage modeling of 4H silicon carbide (SiC) using the technology computer aided design (TCAD) tools for up to 1 kV forward and backward ...
Abstract: Stability and instability of the negative capacitance (NC) states in metal (M) / ferroelectric (F) /M /insulator (I) /semiconductor (S) structures are rigorously studied using a newly ...
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