Abstract: The Reaction-Diffusion-Drift (RDD) framework, implemented in both Sentaurus TCAD and standalone 1-D versions, is used to simulate Program/Erase (P/E) cycling related Tunnel Oxide Trap ...
Abstract: In this paper, Sentaurus TCAD simulation was utilized to study the electrical characteristics of floating body and body contact SOI devices. The short channel effect, subthreshold slope, ...
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