Abstract: This paper proposes a radio frequency-non-orthogonal multiple access integrated sensing and communication (RF-NOMA ISAC) beyond the fifth generation (B5G) network where the input power ...
Abstract: Selective lateral etching of the SiGe layers is one of the most critical steps in Gate-All-Around Field-Effect Transistor (GAAFET) fabrication, which is the basis for the formation of an ...
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