Abstract: Si/SiGe nanosheet-based CMOS technology is essential for 3nm semiconductor nodes and below. This study investigates stress in Si/SiGe superlattice nanosheets after fin patterning on silicon ...
Abstract: In this paper, we propose a process-aware analytical gate resistance model for nanosheet field-effect transistors (NSFETs). The proposed NSFET gate resistance is modeled by applying the ...
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