A technical paper titled “AutoCRAFT: Layout Automation for Custom Circuits in Advanced FinFET Technologies” was published by researchers at UT Austin and NVIDIA. “This paper presents AutoCRAFT, an ...
Abstract: The effects of proton-induced multiple-cell upsets (MCUs) on 16 and 12-nm fin field effect transistor (FinFET) static random access memories (SRAMs) were studied. Their dependence on the ...
Abstract: This work presents a comprehensive investigation into the reliability degradation behaviors of n-type fin field effect transistor (N-FinFET) devices under alternating current (ac) stress ...
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