Abstract: The effects of proton-induced multiple-cell upsets (MCUs) on 16 and 12-nm fin field effect transistor (FinFET) static random access memories (SRAMs) were studied. Their dependence on the ...
Abstract: The hot carrier injection (HCI) reliability of n-type FinFETs in ring oscillators (ROs) is investigated with consideration of the circuit-level time-varying electrothermal effects in the ROs ...
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