Abstract: In this article, the impact of the measurement delay and connection to the body contact on the reliability of the ferroelectric field effect transistor (FeFET) under the capacitive ...
A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...
Abstract: We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided ...
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