Tech Xplore

Ultra-small, high-performance electronics grown directly on 2D semiconductors

In recent years, electronics engineers have been trying to identify semiconducting materials that could substitute for ...
IEEE

Impact of the Endurance Measurement Methodology on Ferroelectric Field Effect Transistor Under the Capacitive Nondestructive Read

Abstract: In this article, the impact of the measurement delay and connection to the body contact on the reliability of the ferroelectric field effect transistor (FeFET) under the capacitive ...
IEEE

A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors

Abstract: This study introduces a physics-based, SPICE-compatible model for Nanosheet Field-Effect Transistors (NsFETs) that offers explicit expressions for the drain current, terminal charges, and ...