Abstract: In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of $\mathbf{4 F}^{2}$ ...
Abstract: An ON-chip vacuum transistor based on electron emission from SiOx tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel ...
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