Abstract: A voltage-domain global shutter image sensor with 1.8μm-pixel-pitch was fabricated based on a 3-layer stacking scheme enabled by pixel-level Cu-to-Cu bonding processes. Excellent sensor ...
Abstract: Using a new multielement-molecular-ion implantation technique with carbon, hydrogen, and phosphorus, we developed an epitaxial silicon wafer with proximity gettering sinks under the ...
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