Abstract: At submicron range below 45 nm technology for MOS transistors, leakage power dissipation is a critical concern other than dynamic and short circuit power dissipation. This happens due to the ...
Abstract: High frequency detection based on MOS-FET technology was long justified using a mechanism described by the plasma wave detection theory. In this paper we propose a new model based on the ...
This paper presents a current sensing principle appropriate for use in power electronics' converters. This current measurement principle has been developed for metal oxide semiconductor field effect ...
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