Ampleon has unveiled the first family of RF power devices that are based on its Advanced Rugged Technology (ART) derivative of the ninth-generation high-voltage laterally diffused metal-oxide ...

Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

Cree Semiconductor Re-Enters High-Power RF Transistor Market SUMMARY HED: Gallium nitride transistors deliver 300 Watts at 2.7 GHz At the start of the DTV transition, Westinghouse and Cree partnered ...

Austin, June 16, 2025 (GLOBE NEWSWIRE) -- LDMOS RF Power Transistor Market Size & Growth Insights: According to the SNS Insider,“The LDMOS RF Power Transistor Market size was valued at USD 1.31 ...

Microsemi Corporation ( MSCC) recently unveiled a 750 watt (W) RF transistor named MDSGN-750ELMV. The transistor is designed to provide highest power performance in air traffic control and accident ...

Ampleon’s transistor offers a frequency response of 0 to 650 MHz in an air-cavity ceramic package. Ampleon has released the first of a family of RF power devices based on its Advanced Rugged ...

The first step in designing a microwave frequency power amplifier monolithic microwave integrated circuit on a given GaN foundry process is to select the transistor size and bias, writes Liam Devlin.

While LDMOS power devices are going to low-cost plastic packages, GaAs HBTs are migrating to larger wafers to cut cost.

By combining the high power density of their GaN transistors with the excellent thermal properties of multilayer Multi-Mix (R) Microtechnology, we are confident that we will develop new benchmarks in ...