The ISL73096EH is a radiation hardened ultra high frequency NPN/PNP transistor array. It contains three NPN transistors and two PNP transistors on a common substrate. The device covers all of the ...
Debuting as the market’s first 5 GHz NPN silicon-germanium (SiGe) transistors, the NESG2021M05, NESG2031M05 are designed for use as LNA devices in WLAN, cordless phones, and short-range wireless ...
Scientists made a single-molecule transistor using quantum interference to control electron flow. This new design offers high on/off ratio and stability, potentially leading to smaller, faster, and ...
Researchers built a four-atom-thick transistor combining an atomically thin semiconductor and molecular crystal. It uses charge localization and works at room temperature. (Nanowerk News) The ability ...
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports scalable 3D semiconductor integration. (Nanowerk News) Researchers at the Daegu ...