Taiwan Semiconductor Manufacturing Company (TSMC) may be showing off its vision for the future of chip manufacturing technologies beyond 20 nanometers when it unveils its latest research into FinFET ...

GlobalFoundries today accelerated its roadmap with the launch of a new technology designed for the expanding mobile market. The company’s 14nm-XM offering will give customers the performance and power ...

Logic semiconductor manufacturers plan to replace FinFET devices with Gate All Around at sub-3nm nodes. Applied Materials has introduced a complex seven chamber system with Atomic Layer Deposition as ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides ...

TSMC 3nm process node is the best FinFET technology and TSMC dominates semiconductor chip fabrication with higher transistor density, better yields on a mature technology and broad adoption by clients ...

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To achieve the power, performance, and area (PPA) advantages dictated by Moore’s law, transistors have evolved substantially over the years. The development of planar transistors at Fairchild ...

The next frontier in the electronics industry is the FinFET, a new type of multi-gate 3D transistor that offers tremendous power and performance advantages compared to traditional, planar transistors.

Microchip fab plants in the United States can cram billions of data processing transistors onto a tiny silicon chip, but a critical device, in essence a “clock,” to time the operation of those ...